Product Overview
The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high-performance, excellent quality, and high ruggedness.
Features
- High Ruggedness for Motor Control
- VCE(sat) Positive Temperature Coefficient
- Very Soft, Fast Recovery Anti-Parallel Diode
- Low EMI
- Maximum Junction Temperature +175°C
- Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
- Halogen and Antimony Free. “Green” Device (Note 3)
Electrical Characteristics
- Collector-Emitter Voltage (VCE): 650V
- DC Collector Curren (Ic): 30A
- Current - Collector Pulsed (Icplus): 60A
- Diode Forward Current (IF): 30A
- Gate-Emitter Voltage (VGE): +- 20V
- Short Circuit Withstand Time (tsc): 5us
