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IGBT transistor 650V - 30A

  • Image 1
Price:
$2.95
SKU:
COM-CB65T15
Current Stock:
300
Quantity:


Product Description

The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high-performance, excellent quality, and high ruggedness.

Features

  • High Ruggedness for Motor Control
  • VCE(sat) Positive Temperature Coefficient
  • Very Soft, Fast Recovery Anti-Parallel Diode
  • Low EMI
  • Maximum Junction Temperature +175°C
  • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)

Electrical Characteristics

  • Collector-Emitter Voltage (VCE): 650V
  • DC Collector Curren (Ic): 30A
  • Current - Collector Pulsed (Icplus): 60A 
  • Diode Forward Current (IF): 30A
  • Gate-Emitter Voltage (VGE): +- 20V
  • Short Circuit Withstand Time (tsc): 5us

Pinout
com-cb65t15-pinout.png

Documents

Datasheet


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