The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high-performance, excellent quality, and high ruggedness.

Features

• High Ruggedness for Motor Control
• VCE(sat) Positive Temperature Coefficient
• Very Soft, Fast Recovery Anti-Parallel Diode
• Low EMI
• Maximum Junction Temperature +175°C
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)

Electrical Characteristics

• Collector-Emitter Voltage (VCE): 650V
• DC Collector Curren (Ic): 30A
• Current - Collector Pulsed (Icplus): 60A 
• Diode Forward Current (IF): 30A
• Gate-Emitter Voltage (VGE): +- 20V
• Short Circuit Withstand Time (tsc): 5us

Pinout

Documents

Datasheet