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N-Channel MOSFET IRF520N

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Product Description

This mosfet utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combined with the fast switching speed and ruggedized device Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry

Electrical characteristics:

  • Continuous Drain Current, VGS @ 10V(IDS @ TC = 25°C): 9.7A
  • Power Dissipation(PD @TC = 25°C): 48W
  • Gate-to-Source Voltage(VGS): ± 20V
  • Static Drain-to-Source On-Resistance(RDS(on)): 0.20Ω max



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